CP200P70

High Frequency Packaged pHEMT

CP200P70

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The  CP200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25μm x 200mm Schottky barrier Gate, defined by high‐resolution stepper‐based photolithography.

• 20 dBm Output Power (P1dB)
• 17 dB Gain at 5.8 GHz
• 0.7 dB Noise Figure at 5.8 GHz
• 30 dBm Output IP3
• 45% Power‐Added Efficiency
• Useable Gain to 26 GHz
• Two stage AOI FAB process
• Optimised Source Wire Bonding Process

•  LNAs and Driver Amplifiers to 26GHz
• VCOs and Frequency Doublers