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The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 μm by 1500 μm Schottky barrier gate, defined by high‐resolution stepper‐based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high‐power applications.

• 30 dBm Linear Output Power at 12 GHz
• 9 dB Power Gain at 12GHz
• 12.5 dB Maximum Stable Gain at 12 GHz
• 41 dB Output IP3
• 35% Power‐Added Efficiency

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