FPD750

0.5W POWER pHEMT

FPD750

Contact Kaiam Laser Sales

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μm x 750μm Schottky barrier gate, defined by high-resolution stepper‐based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high‐power applications.

• 27.5dBm Linear Output Power at 12GHz
• 11.5dB Power Gain at 12GHz
• 14.5dB Max Stable Gain at 12GHz
• 38dBm OIP3
• 50% Power‐Added Efficiency

• Narrowband and Broadband High‐ Performance Amplifiers
• SATCOM Uplink Transmitters
• PCS/Cellular Low‐Voltage High‐Efficiency Output Amplifiers
• Medium‐Haul Digital Radio Transmitters