General Purpose pHEMT


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The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μm x 200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.

• 20.5 dBm Output P1dB
• 13 dB Power Gain at 12GHz
• 17 dB Maximum Stable Gain at 12 GHz
• 11 dB Maximum Stable gain at 18 GHz
• 45% Power‐Added Efficiency

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