FPD6836

0.25W POWER pHEMT

FPD6836

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The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μm x 360μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.

• 25.5dBm Output Power (P1dB)
• 10dB Power Gain at 12GHz
• 16.5dB Max Stable Gain at 12GHz
• 12dB Maximum Stable Gain at 24GHz
• 50% Power‐Added Efficiency

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