Low-Noise High-Frequency Packaged pHEMT


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The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.

• 22dBm Output Power (P1dB)
• 15dB Gain at 5.8GHz
• 0.8dB Noise Figure at 5.8GHz
• 32dB Output IP3 at 5.8GHz
• 45% Power‐Added Efficiency at 5.8GHz
• Usable Gain to 18GHz

• Gain blocks and medium power stages
• WiMax (2GHz to 11GHz)
• WLAN 802.11a (5.8GHz)
• Point‐to‐Point Radio (to 18GHz)