FPD200

General Purpose pHEMT Die

FPD200

Contact Kaiam Laser Sales

The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μmx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.

• 19dBm Output P1dB
• 13dB Power Gain at 12GHz
• 17dB Maximum Stable Gain at 12GHz
• 12dB Maximum Stable Gain at 18GHz
• 45% Power‐Added Efficiency

• Narrowband and Broadband High‐Performance Amplifiers
• SATCOM Uplink Transmitters
• PCS/Cellular Low‐Voltage High‐Efficiency Output Amplifiers
• Medium‐Haul Digital Radio Transmitters