FPD1050

0.75W POWER pHEMT

FPD1050

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The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μm x 1050μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.

• 28.5dBm Linear Output Power at 12GHz
• 11dB Power Gain at 12GHz
• 14dB Max Stable Gain at 12GHz
• 41dBm OIP3
• 45% Power-Added Efficiency

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